MIC4416/7
IttyBitty Low-Side MOSFET Driver
Features
General Description
• +4.5V to +18V Operation
• Low Steady-State Supply Current
- 50 μA Typical, Control Input Low
- 370 μA Typical, Control Input High
• 1.2A Nominal Peak Output
- 3.5Ω Typical Output Resistance at 18V
Supply
- 7.8Ω Typical Output Resistance at 5V Supply
• 25 mV Maximum Output Offset from Supply or
Ground
• Operates in Low-Side Switch Circuits
• TTL-Compatible Input Withstands –20V
• ESD Protection
• Inverting and Non-Inverting Versions
The MIC4416 and MIC4417 IttyBitty low-side MOSFET
drivers are designed to switch an N-channel
enhancement-type MOSFET from a TTL-compatible
control signal in low-side switch applications. The
MIC4416 is non-inverting and the MIC4417 is inverting.
These drivers feature short delays and high peak
current to produce precise edges and rapid rise and fall
times. Their tiny 4-lead SOT-143 package uses
minimal space.
Applications
•
•
•
•
Battery Conservation
Solenoid and Motion Control
Lamp Control
Switch-Mode Power Supplies
The MIC4416/7 are powered from a +4.5V to +18
supply voltage. The on-state drive output voltage is
approximately equal to the supply voltage (no internal
regulators or clamps). High supply voltages, such as
10V, are appropriate for use with standard N-channel
MOSFETs. Low supply voltages, such as 5V, are
appropriate for use with logic-level N-channel
MOSFETs.
In a low-side configuration, the drive can control a
MOSFET that switches any voltage up to the rating of
the MOSFET. The MIC4416/7 are available in the
SOT-143 package and are rated for the –40°C to
+85°C ambient temperature range.
Package Type
MIC4416/7
4-Lead SOT-143 (M4)
(Top View)
G
GND
2
1
Part
Identification
2018 Microchip Technology Inc.
Dxx
3
4
VS
CTL
DS20006077A-page 1
MIC4416/7
Typical Application Circuit
Load
Voltage†
* Siliconix
30m: , 7A max.
†
Load voltage limited only by
MOSFET drain-to-source rating
Load
+12V
4.7μF
MIC4416
0.1μF
3
4
On
Off
VS
G
C T L GND
2
1
Si9410DY*
N-channel
MOSFET
Functional Block Diagram
VS U P P L Y
VS W I T C H E D
VS
D1
CTL
Logic-Level
Input
DS20006077A-page 2
Q2
D4
Load
0.6mA
0.3mA
MIC4417
INVERTING
Q3
R1
Nȍ
G
Q1
D2
D3
35V
D5
MIC4416
NON-INVERTING
Q4
GND
2018 Microchip Technology Inc.
MIC4416/7
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage (VS) ..................................................................................................................................................+20V
Control Voltage (VCTL) ................................................................................................................................ –20V to +20V
Gate Voltage (VG) .....................................................................................................................................................+20V
Junction Temperature (TJ)..................................................................................................................................... +150°C
Lead Temperature (Soldering, 5 sec.)................................................................................................................... +260°C
Operating Ratings ††
Supply Voltage (VS) ................................................................................................................................... +4.5V to +18V
Control Voltage (VCTL) .........................................................................................................................................0V to VS
Ambient Temperature Range (TA)............................................................................................................ –40°C to +85°C
Package Thermal Resistance
SOT-143 (JA) (Note 1) .......................................................................................................................................220°C/W
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
†† Notice: The device is not guaranteed to function outside its operating ratings.
Note 1: Soldered to 0.25 in2 copper ground plane.
2018 Microchip Technology Inc.
DS20006077A-page 3
MIC4416/7
ELECTRICAL CHARACTERISTICS
Electrical Characteristics: Typical values at TA = +25°C. Minimum and maximum values indicate performance at
–40°C ≤ TA ≤ +85°C. Parts production tested at +25°C. Devices are ESD protected, however handling precautions
are recommended. Note 1
Parameter
Supply Current
Sym.
IS
Control Input Voltage
VCTL
Control Input Current
ICTL
Delay Time, VCTL Rising
tD
Delay Time, VCTL Falling
tD
Output Rise Time
tr
Output Fall Time
tf
Gate Output Offset
Voltage
Min.
Typ.
Max.
Units
—
50
200
—
370
1500
—
—
0.8
2.4
—
—
–10
—
10
—
42
—
—
33
60
—
42
—
—
23
40
—
24
—
—
14
40
—
28
—
—
16
40
—
–25
—
—
25
—
—
7.6
—
—
7.8
—
VS = 5V, IOUT = 10 mA, N-channel (sink)
MOSFET
—
3.5
10
VS = 18V, IOUT = 10 mA, P-channel
(source) MOSFET
—
3.5
10
250
—
—
µA
V
µA
ns
ns
ns
ns
mV
Ω
Output Resistance
RO
Ω
Gate Output Reverse
Current
Note 1:
2:
mA
Conditions
4.5V ≤ VS ≤ 18V, VCTL = 0V
4.5V ≤ VS ≤ 18V, VCTL = 5V
4.5V ≤ VS ≤ 18V, VCTL for logic 0 input
4.5V ≤ VS ≤ 18V, VCTL for logic 1 input
0V ≤ VCTL ≤ VS
VS = 5V, CL = 1000 pF, Note 2
VS = 18V, CL = 1000 pF, Note 2
VS = 5V, CL = 1000 pF, Note 2
VS = 18V, CL = 1000 pF, Note 2
VS = 5V, CL = 1000 pF, Note 2
VS = 18V, CL = 1000 pF, Note 2
VS = 5V, CL = 1000 pF, Note 2
VS = 18V, CL = 1000 pF, Note 2
4.5V ≤ VS ≤ 18V, VG = high
4.5V ≤ VS ≤ 18V, VG = low
VS = 5V, IOUT = 10 mA, P-channel
(source) MOSFET
VS = 18V, IOUT = 10 mA, N-channel
(sink) MOSFET
No latch up.
Specification for packaged product only.
Refer to “MIC4416 Timing Definitions” and “MIC4417 Timing Definitions” diagrams.
DS20006077A-page 4
2018 Microchip Technology Inc.
MIC4416/7
TEMPERATURE SPECIFICATIONS
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Junction Temperature Range
TJ
–40
—
+125
°C
—
Ambient Storage Temperature
TS
–65
—
+150
°C
—
JA
—
60
—
°C/W
—
Temperature Ranges
Package Thermal Resistances
Thermal Resistance, 3x3 DFN 12-Ld
Note 1:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.
Definitions
I SUPPLY
I OUT
MIC4416/7
V SUPPLY
3
MIC4416 = high
MIC4417 = low
4
VS
G
CTL
GND
2
I SUPPLY
V OUT ≈ V SUPPLY
1
V SUPPLY
MIC4416 = low
MIC4417 = high
4
Source State
(P-channel on, N-channel off)
FIGURE 1-1:
I OUT
MIC4416/7
3
VS
CTL
G
GND
2
V OUT ≈ GND
1
Sink State
(P-channel off, N-channel on)
MIC4416/7 Operating States.
INPUT
5V
90%
2.5V
10%
0V
VS
90%
delay
time
pulse
width
rise
time
delay
time
fall
time
OUTPUT
10%
0V
FIGURE 1-2:
MIC4416 (Non-Inverting) Timing Definitions.
INPUT
5V
90%
2.5V
10%
0V
VS
90%
delay
time
pulse
width
rise
time
delay
time
fall
time
OUTPUT
10%
0V
FIGURE 1-3:
MIC4417 (Inverting) Timing Definitions.
2018 Microchip Technology Inc.
DS20006077A-page 5
MIC4416/7
2.0
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Typical characteristics at TA = +25°C, VS = 5V, CL = 1000 pF unless noted.
100
100kHz
VS U P P L Y
MIC4416/7
3
4
VS
G
C T L GND
2
1
CL
VOUT
5V
0V
SUPPLY CURRENT (mA)
1MHz
10
10kHz
1
V SUPPLY = 18V
0.1
FIGURE 2-1:
Test Circuit.
1
FIGURE 2-4:
Capacitance.
10
CAPACITANCE (nF)
100
Supply Current vs. Load
100
500
V CTL = 0V
0
0.1
0
3
6
9
12 15
SUPPLY VOLTAGE (V)
FIGURE 2-2:
Supply Voltage.
18
5V
FREQUENCY (kHz)
Quiescent Current vs.
100
FIGURE 2-5:
Frequency.
Supply Current vs.
100
V SUPPLY = 5V
fCTL = 50kHz
1MHz
100kHz
10
10
TIME (μs)
SUPPLY CURRENT (mA)
2000
100
1
1000
200
100
300
V SUPPLY = 18V
10
10
400
SUPPLY CURRENT (mA)
SUPPLY CURRENT (μA)
V CTL = 5V
10kHz
FALL
1
RISE
1
0.1
V SUPPLY = 5V
0.1
0.01
1
FIGURE 2-3:
Capacitance.
DS20006077A-page 6
10
CAPACITANCE (nF)
100
Supply Current vs. Load
1
10
CAPACITANCE (nF)
100
FIGURE 2-6:
Output Rise and Fall Time
vs. Load Capacitance.
2018 Microchip Technology Inc.
MIC4416/7
60
10
V SUPPLY = 18V
fCTL = 50kHz
50
TIME (ns)
TIME (μs)
V CTL RISE
40
1
FALL
RISE
0.1
30
20
V CTL FALL
10
0.01
1
10
CAPACITANCE (nF)
V SUPPLY = 18V
0
-60 -30 0 30 60 90 120 150
TEMPERATURE (°C)
100
FIGURE 2-7:
Output Rise and Fall Time
vs. Load Capacitance.
FIGURE 2-10:
Temperature.
60
50
50
40
Delay Time vs.
fCTL = 1MHz
V CTL RISE
TIME (ns)
TIME (ns)
40
30
20
V CTL FALL
10
0
FIGURE 2-8:
Voltage.
0
3
6
9
12 15
SUPPLY VOLTAGE (V)
20
FALL
10
RISE
0
18
Delay Time vs. Supply
30
0
3
6
9
12 15
SUPPLY VOLTAGE (V)
FIGURE 2-11:
Supply Voltage.
60
18
Rise and Fall Time vs.
50
V CTL FALL
50
40
V CTL RISE
TIME (ns)
TIME (ns)
40
30
20
FALL
20
10
10
V SUPPLY = 5V
0
-60 -30 0 30 60 90 120 150
TEMPERATURE (°C)
FIGURE 2-9:
Temperature.
30
Delay Time vs.
2018 Microchip Technology Inc.
0
-60 -30
FIGURE 2-12:
Temperature.
RISE
V SUPPLY = 5V
fCTL = 1MHz
0 30 60 90 120 150
TEMPERATURE (°C)
Rise and Fall Time vs.
DS20006077A-page 7
MIC4416/7
600
50
V SUPPLY = 18V
fCTL = 1MHz
500
HYSTERESIS (mV)
TIME (ns)
40
30
FALL
20
RISE
10
0
-60 -30
FIGURE 2-13:
Temperature.
200
0
0 30 60 90 120 150
TEMPERATURE (°C)
Rise and Fall Time vs.
0
FIGURE 2-16:
Supply Voltage.
3
6
9
12 15
SUPPLY VOLTAGE (V)
18
Control Input Hysteresis vs.
10
NOTE 1
1000
8
ON RESISTANCE ( Ω)
VOLTAGE DROP (mV)
300
100
1200
800
V SUPPLY = 5V
600
400
18V
200
0
400
0
20
40
60
80
OUTPUT CURRENT (mA)
4
I OUT = 10mA
2
0
100
FIGURE 2-14:
Output Voltage Drop vs.
Output Source Current (Note 1).
6
0
FIGURE 2-17:
3
6
9
12 15
SUPPLY VOLTAGE (V)
18
Output Source Resistance.
10
1200
NOTE 2
8
ON RESISTANCE ( Ω)
VOLTAGE DROP (mV)
1000
800
V SUPPLY = 5V
600
400
18V
200
0
6
4
I OUT = 10mA
2
0
0
20
40
60
80
OUTPUT CURRENT (mA)
100
FIGURE 2-15:
Output Voltage Drop vs.
Output Sink Current (Note 2).
0
FIGURE 2-18:
3
6
9
12 15
SUPPLY VOLTAGE (V)
18
Output Sink Resistance.
Note 1: Source-to-drain voltage drop across the internal P-Channel MOSFET is VS – VG.
2: Source-to-drain voltage drop across the internal N-Channel MOSFET is VG – VGND (Voltage applied to G).
DS20006077A-page 8
2018 Microchip Technology Inc.
MIC4416/7
800
2.0
V SUPPLY = 18V
400
5V
CURRENT (A)
HYSTERESIS (mV)
600
2.5
200
FIGURE 2-19:
Temperature.
0
0 30 60 90 120 150
TEMPERATURE (°C)
Control Input Hysteresis vs.
10
8
6
4
V SUPPLY = 18V
I OUT ≈ 3mA
2
FIGURE 2-20:
vs. Temperature.
SUPPLY CURRENT (mA)
ON-RESISTANCE (Ω)
3
6
9
12 15
SUPPLY VOLTAGE (V)
18
V SUPPLY = 5V
V SUPPLY = 5V
I OUT ≈ 3mA
0
-60 -30
Output Source Resistance
C L = 10,000pF
10
5,000pF
2,000pF
1,000pF
1
0pF
0.1
1x10 2 1x10 3 1x10 4 1x10 5 1x10 6 1x10 7
FREQUENCY (Hz)
0 30 60 90 120 150
TEMPERATURE (°C)
FIGURE 2-23:
Frequency.
Supply Current vs.
100
14
V SUPPLY = 18V
V SUPPLY = 5V
I OUT ≈ 3mA
8
6
4
2
0
-60 -30
V SUPPLY = 18V
I OUT ≈ 3mA
0 30 60 90 120 150
TEMPERATURE (°C)
Output Sink Resistance vs.
SUPPLY CURRENT (mA)
ON-RESISTANCE (Ω)
0
100
12
FIGURE 2-21:
Temperature.
Sink
NOTE 4
FIGURE 2-22:
Peak Output Current vs.
Supply Voltage (Note 3, Note 4).
14
10
1.0
0.5
0
-60 -30
12
Source
NOTE 3
1.5
C L = 10,000pF
5,000pF
10
2,000pF
1,000pF
1
0pF
0.1
1x10 2 1x10 3 1x10 4 1x10 5 1x10 6 1x10 7
FREQUENCY (Hz)
FIGURE 2-24:
Frequency.
Supply Current vs.
3: 1 µs pulse test, 50% duty cycle. OUT connected to GND. OUT sources current. (MIC4416, VCTL = 5V;
MIC4417, VCTL = 0V).
4: 1 µs pulse test, 50% duty cycle. VS connected to OUT. OUT sinks current. (MIC4416, VCTL = 0V; MIC4417,
VCTL = 5V).
2018 Microchip Technology Inc.
DS20006077A-page 9
MIC4416/7
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Pin Number
Pin Name
1
GND
Description
Ground. Power return.
2
G
Gate (output): Gate connection to external MOSFET.
3
VS
Supply (input): +4.5V to +18V supply.
CTL
Control (input): TTL-compatible on/off control input.
MIC4416 only: Logic high forces the gate output to the supply voltage.
Logic low forces the gate output to ground.
MIC4417 only: Logic high forces the gate output to ground. Logic low
forces the gate output to the supply voltage.
4
DS20006077A-page 10
2018 Microchip Technology Inc.
MIC4416/7
4.0
FUNCTIONAL DESCRIPTION
Refer to the Functional Block Diagram.
The MIC4416 is a non-inverting driver. A logic high on
the CTL (control) input produces gate drive output. The
MIC4417 is an inverting driver. A logic low on the CTL
(control) input produces gate drive output. The G (gate)
output is used to turn on an external N-channel
MOSFET.
4.1
4.6
ESD Protection
D1 protects VS from negative ESD voltages. D2 and
D3 clamp positive and negative ESD voltages applied
to CTL. R1 isolates the gate of Q1 from sudden
changes on the CTL input. D4 and D5 prevent Q1’s
gate voltage from exceeding the supply voltage or
going below ground.
Supply
VS (supply) is rated for +4.5V to +18V. External
capacitors are recommended to decouple noise.
4.2
Control
CTL (control) is a TTL-compatible input. CTL must be
forced high or low by an external signal. A floating input
will cause unpredictable operation.
A high input turns on Q1, which sinks the output of the
0.3 mA and the 0.6 mA current source, forcing the input
of the first inverter low.
4.3
Hysteresis
The control threshold voltage, when CTL is rising, is
slightly higher than the control threshold voltage when
CTL is falling.
When CTL is low, Q2 is on, which applies the additional
0.6 mA current source to Q1. Forcing CTL high turns
on Q1 which must sink 0.9 mA from the two current
sources. The higher current through Q1 causes a
larger drain-to-source voltage drop across Q1. A
slightly higher control voltage is required to pull the
input of the first inverter down to its threshold.
Q2 turns off after the first inverter output goes high.
This reduces the current through Q1 to 0.3 mA. The
lower current reduces the drain-to-source voltage drop
across Q1. A slightly lower control voltage will pull the
input of the first inverter up to its threshold.
4.4
Drivers
The second (optional) inverter permits the driver to be
manufactured in inverting and non-inverting versions.
The last inverter functions as a driver for the output
MOSFETs Q3 and Q4.
4.5
Gate Output
G (gate) is designed to drive a capacitive load. VG (gate
output voltage) is either approximately the supply
voltage or approximately ground, depending on the
logic state applied to CTL.
If CTL is high, and VS (supply) drops to zero, the gate
output will be floating (unpredictable).
2018 Microchip Technology Inc.
DS20006077A-page 11
MIC4416/7
The MIC4416/7 is designed to provide high peak
current for charging and discharging capacitive loads.
The 1.2A peak value is a nominal value determined
under specific conditions. This nominal value is used to
compare its relative size to other low-side MOSFET
drivers. The MIC4416/7 is not designed to directly
switch 1.2A continuous loads.
5.1
Supply Bypass
5.3
MOSFET Selection
5.3.1
The MIC4416/7’s on-state output is approximately
equal to the supply voltage. The lowest usable voltage
depends upon the behavior of the MOSFET.
Capacitors from VS to GND are recommended to
control switching and supply transients. Load current
and supply lead length are some of the factors that
affect capacitor size requirements.
A 4.7 μF or 10 μF tantalum capacitor is suitable for
many applications. Low-ESR (equivalent series
resistance) metalized film capacitors may also be
suitable. An additional 0.1 μF ceramic capacitor is
suggested in parallel with the larger capacitor to control
high-frequency transients.
The low ESR of tantalum capacitors makes them
especially effective, but also makes them susceptible
to uncontrolled inrush current from low impedance
voltage sources (such as NiCd batteries or automatic
test equipment). Avoid instantaneously applying
voltage capable of very high peak current directly to or
near tantalum capacitors without additional current
limiting. Normal power supply turn-on (slow rise time)
or printed circuit trace resistance is usually adequate
for normal product usage.
5.2
Circuit Layout
Avoid long power supply and ground traces. They
exhibit inductance that can cause voltage transients
(inductive kick). Even with resistive loads, inductive
transients can sometimes exceed the ratings of the
MOSFET and the driver.
When a load is switched off, supply lead inductance
forces current to continue flowing—resulting in a
positive voltage spike. Inductance in the ground
(return) lead to the supply has similar effects, except
the voltage spike is negative.
STANDARD MOSFET
A standard N-channel power MOSFET is fully
enhanced with a gate-to-source voltage of
approximately 10V and has an absolute maximum
gate-to-source voltage of ±20V.
+15V
* Gate enhancement voltage
+8V to +18V
4.7μF
3
4
Logic
Input
VS
CTL
G
GND
Standard
MOSFET
IRFZ24 †
2
1
VGS*
† International Rectifier
100m : , 60V MOSFET
FIGURE 5-1:
5.3.2
Using a Standard MOSFET.
LOGIC-LEVEL MOSFET
Logic-level N-channel power MOSFETs are fully
enhanced with a gate-to-source voltage of
approximately 5V and have an absolute maximum
gate-to-source voltage of ±10V. They are less common
and generally more expensive.
The MIC4416/7 can drive a logic-level MOSFET if the
supply voltage, including transients, does not exceed
the maximum MOSFET gate-to-source rating (10V).
+5V
* Gate enhancement voltage
(must not exceed 10V)
+4.5V to 10V*
4.7μF
0.1μF
Transients can also result in slower apparent rise or fall
times when the driver’s ground shifts with respect to the
control input.
Logic
Input
DS20006077A-page 12
MIC4416
0.1μF
Switching transitions momentarily draw current from
VS to GND. This combines with supply lead inductance
to create voltage transients at turn on and turn off.
Minimize the length of supply and ground traces or use
ground and power planes when possible. Bypass
capacitors should be placed as close as practical to the
driver.
Try a
15 : , 15W
or
1kΩ, 1/4W
resistor
Load
APPLICATION INFORMATION
Load
5.0
MIC4416
3
4
VS
CTL
G
GND
Logic-Level
MOSFET
IRLZ44 †
2
1
Try a
3: , 10W
or
100 : , 1/4W
resistor
VGS*
† International Rectifier
28m: , 60V MOSFET
FIGURE 5-2:
MOSFET.
Using a Logic-Level
2018 Microchip Technology Inc.
MIC4416/7
At low voltages, the MIC4416/7’s internal P- and
N-channel MOSFET’s on-resistance will increase and
slow the output rise time. Refer to the Typical
Performance Curves graphs.
5.4
Supply current is a function of supply voltage, switching
frequency, and load capacitance. Determine this value
from Figure 2-23 and Figure 2-24 or measure it in the
actual application.
Do not allow PD to exceed PD(MAX).
Inductive Loads
Switching off an inductive load in a low-side application
forces the MOSFET drain higher than the supply
voltage (as the inductor resists changes to current). To
prevent exceeding the MOSFET’s drain-to-gate and
drain-to-source ratings, a Schottky diode should be
connected across the inductive load.
TJ (junction temperature) is the sum of TA (ambient
temperature) and the temperature rise across the
thermal resistance of the package. In another form:
EQUATION 5-2:
150 – T A
P D MAX --------------------220
V SWITCHED
V SUPPLY
Schottky
Diode
4.7μF
MIC4416
0.1μF
3
4
On
Off
VS
CTL
GND
2
1
Maximum power dissipation at 20°C with the driver
soldered to a 0.25 in2 ground plane is approximately
600 mW.
G
FIGURE 5-3:
Load.
5.5
G
Where:
PD(MAX) = Maximum power dissipation (in watts)
150 = Maximum junction temperature (in °C)
TA = Ambient temperature (in °C)
220 = Package thermal resistance (in °C/W)
Switching an Inductive
PCB heat sink/
ground plane
GND
Power Dissipation
The maximum power dissipation must not be exceeded
to prevent die meltdown or deterioration.
Power dissipation in on/off switch applications is
negligible.
Fast repetitive switching applications, such as SMPS
(switch mode power supplies), cause a significant
increase in power dissipation with frequency. Power is
dissipated each time current passes through the
internal output MOSFETs when charging or
discharging the external MOSFET. Power is also
dissipated during each transition when some current
momentarily passes from VS to GND through both
internal MOSFETs.
Power dissipation is the product of supply voltage and
supply current:
EQUATION 5-1:
PD = VS IS
Where:
PD = Power dissipation (in watts)
VS = Supply voltage (in volts)
IS = Supply current (in amps)
2018 Microchip Technology Inc.
VS
FIGURE 5-4:
CTL
PCB traces
Heat Sink Plane.
The SOT-143 package θJA (junction-to-ambient
thermal resistance) can be improved by using a heat
sink larger than the specified 0.25 in2 ground plane.
Significant heat transfer occurs through the large
(GND) lead. This lead is an extension of the paddle to
which the die is attached.
5.6
High Frequency Operation
Although the MIC4416/7 driver will operate at
frequencies greater than 1 MHz, the MOSFET’s
capacitance and the load will affect the output
waveform (at the MOSFET’s drain).
For example, an MIC4416/IRL3103 test circuit using a
47Ω 5W load resistor will produce an output waveform
that closely matches the input signal shape up to about
500 kHz. The same test circuit with a 1 kΩ load resistor
operates only up to about 25 kHz before the MOSFET
source waveform shows significant change.
DS20006077A-page 13
MIC4416/7
+5V
Slower rise time
observed at
MOSFET’s drain
Compare
47 : , 5W
to
1k : , 1/4W
loads
+4.5V to 18V
4.7μF
MIC4416
0.1μF
3
Logic
Input
4
VS
CTL
D
G
GND
2
1
G
S
Logic-Level
MOSFET
IRL3103*
* International Rectifier
14m: , 30V MOSFET,
logic-level, VG S = –20V max.
FIGURE 5-5:
MOSFET Capacitance
Effect at High Switching Frequency.
When the MOSFET is driven off, the slower rise occurs
because the MOSFET’s output capacitance recharges
through the load resistance (RC circuit). A lower load
resistance allows the output to rise faster. For the
fastest driver operation, choose the smallest power
MOSFET that will safely handle the desired voltage,
current, and safety margin. The smallest MOSFETs
generally have the lowest capacitance.
DS20006077A-page 14
2018 Microchip Technology Inc.
MIC4416/7
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
Legend: XX...X
Y
YY
WW
NNN
e3
*
4-Lead SOT-143*
Example
XXX
NNN
D10
287
Product code or customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
●, ▲, ▼ Pin one index is identified by a dot, delta up, or delta down (triangle
mark).
Note:
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information. Package may or may not include
the corporate logo.
Underbar (_) and/or Overbar (⎯) symbol may not be to scale.
2018 Microchip Technology Inc.
DS20006077A-page 15
MIC4416/7
4-Lead SOT-143 Package Outline & Recommended Land Pattern
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging.
DS20006077A-page 16
2018 Microchip Technology Inc.
MIC4416/7
APPENDIX A:
REVISION HISTORY
Revision A (October 2018)
• Converted Micrel document MIC4416/7 to Microchip data sheet template DS20006077A.
• Minor grammatical text changes throughout.
2018 Microchip Technology Inc.
DS20006077A-page 17
MIC4416/7
NOTES:
DS20006077A-page 18
2018 Microchip Technology Inc.
MIC4416/7
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.
Examples:
Device
X
XX
-XX
Part No.
Junction
Temp. Range
Package
Media Type
a) MIC4416YM4-TR:
b) MIC4417YM4-TR:
MIC4416:
Device:
IttyBitty Low-Side Non-Inverting MOSFET
Driver
IttyBitty Low-Side Inverting MOSFET
Driver
MIC4417:
Junction
Temperature
Range:
Y
=
–40°C to +85°C, RoHS-Compliant
Package:
M4
=
4-Lead SOT-143
Media Type:
TR
=
3,000/Reel
2018 Microchip Technology Inc.
Note 1:
MIC4416, –40°C to +85°C
Temperature Range,
4-Lead SOT-143, 3,000/Reel
MIC4417, –40°C to +85°C
Temperature Range,
4-Lead SOT-143, 3,000/Reel
Tape and Reel identifier only appears in the
catalog part number description. This identifier is
used for ordering purposes and is not printed on
the device package. Check with your Microchip
Sales Office for package availability with the
Tape and Reel option.
DS20006077A-page 19
MIC4416/7
NOTES:
DS20006077A-page 20
2018 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Trademarks
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
SQTP is a service mark of Microchip Technology Incorporated in
the U.S.A.
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
The Microchip name and logo, the Microchip logo, AnyRate, AVR,
AVR logo, AVR Freaks, BitCloud, chipKIT, chipKIT logo,
CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo,
JukeBlox, KeeLoq, Kleer, LANCheck, LINK MD, maXStylus,
maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB,
OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip
Designer, QTouch, SAM-BA, SpyNIC, SST, SST Logo,
SuperFlash, tinyAVR, UNI/O, and XMEGA are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
and other countries.
ClockWorks, The Embedded Control Solutions Company,
EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS,
mTouch, Precision Edge, and Quiet-Wire are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any
Capacitor, AnyIn, AnyOut, BodyCom, CodeGuard,
CryptoAuthentication, CryptoAutomotive, CryptoCompanion,
CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average
Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial
Programming, ICSP, INICnet, Inter-Chip Connectivity,
JitterBlocker, KleerNet, KleerNet logo, memBrain, Mindi, MiWi,
motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB,
MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation,
PICDEM, PICDEM.net, PICkit, PICtail, PowerSmart, PureSilicon,
QMatrix, REAL ICE, Ripple Blocker, SAM-ICE, Serial Quad I/O,
SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II, Total
Endurance, TSHARC, USBCheck, VariSense, ViewSpan,
WiperLock, Wireless DNA, and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
Silicon Storage Technology is a registered trademark of Microchip
Technology Inc. in other countries.
GestIC is a registered trademark of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip
Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2018, Microchip Technology Incorporated, All Rights Reserved.
ISBN: 978-1-5224-3586-0
== ISO/TS 16949 ==
2018 Microchip Technology Inc.
DS20006077A-page 21
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
Australia - Sydney
Tel: 61-2-9868-6733
India - Bangalore
Tel: 91-80-3090-4444
China - Beijing
Tel: 86-10-8569-7000
India - New Delhi
Tel: 91-11-4160-8631
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
China - Chengdu
Tel: 86-28-8665-5511
India - Pune
Tel: 91-20-4121-0141
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
China - Chongqing
Tel: 86-23-8980-9588
Japan - Osaka
Tel: 81-6-6152-7160
Finland - Espoo
Tel: 358-9-4520-820
China - Dongguan
Tel: 86-769-8702-9880
Japan - Tokyo
Tel: 81-3-6880- 3770
China - Guangzhou
Tel: 86-20-8755-8029
Korea - Daegu
Tel: 82-53-744-4301
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
China - Hangzhou
Tel: 86-571-8792-8115
Korea - Seoul
Tel: 82-2-554-7200
China - Hong Kong SAR
Tel: 852-2943-5100
Malaysia - Kuala Lumpur
Tel: 60-3-7651-7906
China - Nanjing
Tel: 86-25-8473-2460
Malaysia - Penang
Tel: 60-4-227-8870
China - Qingdao
Tel: 86-532-8502-7355
Philippines - Manila
Tel: 63-2-634-9065
China - Shanghai
Tel: 86-21-3326-8000
Singapore
Tel: 65-6334-8870
China - Shenyang
Tel: 86-24-2334-2829
Taiwan - Hsin Chu
Tel: 886-3-577-8366
China - Shenzhen
Tel: 86-755-8864-2200
Taiwan - Kaohsiung
Tel: 886-7-213-7830
Israel - Ra’anana
Tel: 972-9-744-7705
China - Suzhou
Tel: 86-186-6233-1526
Taiwan - Taipei
Tel: 886-2-2508-8600
China - Wuhan
Tel: 86-27-5980-5300
Thailand - Bangkok
Tel: 66-2-694-1351
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
China - Xian
Tel: 86-29-8833-7252
Vietnam - Ho Chi Minh
Tel: 84-28-5448-2100
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Austin, TX
Tel: 512-257-3370
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Novi, MI
Tel: 248-848-4000
Houston, TX
Tel: 281-894-5983
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
Tel: 317-536-2380
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Tel: 951-273-7800
Raleigh, NC
Tel: 919-844-7510
New York, NY
Tel: 631-435-6000
San Jose, CA
Tel: 408-735-9110
Tel: 408-436-4270
Canada - Toronto
Tel: 905-695-1980
Fax: 905-695-2078
DS20006077A-page 22
China - Xiamen
Tel: 86-592-2388138
China - Zhuhai
Tel: 86-756-3210040
Germany - Garching
Tel: 49-8931-9700
Germany - Haan
Tel: 49-2129-3766400
Germany - Heilbronn
Tel: 49-7131-67-3636
Germany - Karlsruhe
Tel: 49-721-625370
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Germany - Rosenheim
Tel: 49-8031-354-560
Italy - Padova
Tel: 39-049-7625286
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Norway - Trondheim
Tel: 47-7288-4388
Poland - Warsaw
Tel: 48-22-3325737
Romania - Bucharest
Tel: 40-21-407-87-50
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Sweden - Gothenberg
Tel: 46-31-704-60-40
Sweden - Stockholm
Tel: 46-8-5090-4654
UK - Wokingham
Tel: 44-118-921-5800
Fax: 44-118-921-5820
2018 Microchip Technology Inc.
08/15/18
工商网监
湘ICP备2023018690号
